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Based on a multiple scattering theory of RHEED, specular beam intensities are calculated from Si(001) surfaces of 100 x 100 or 50 x 50 atoms per unit mesh, which are generated by a Monte Carlo simulation of homoepitaxial growth on the surface. The intensity shows a systematic variation with respect to time, which relates the RHEED intensity oscillations to the change in the surface morphology during...
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