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We studied resistance changes in TiO x films, induced by annealing and voltage applications. X-ray diffraction (XRD) results showed that annealing TiO x at temperatures in the range of 300 to 650 °C caused crystal structure changes. After 650 °C anneal, TiO x showed rutile TiO 2 XRD peaks. In addition to the XRD changes, 650 °C annealing in air changed electrically...
Perovskite SrRuO 3 films are promising candidates as metallic electrodes in high-permittivity (high k) capacitors and possibly in fully epitaxial CMOS stacks. The thermal stability of SrRuO 3 during forming-gas (FG) anneal is an important requirement and is investigated here by in situ X-ray diffraction (XRD) and electrical resistivity measurements. A weak and smooth increase of the...
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