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Nitrogen-doped germanium telluride (N-GeTe) films with and without silicon nitride (SiN) layer were thermally annealed in an air atmosphere. The SiN layer prevented the oxidation of GeTe films despite the massive in-diffusion of oxygen atoms. The phase transition from cubic to rhombohedral phase occurred only in the air-annealed samples, not in the samples annealed at 2.0mPa. The in-diffused oxygen...
The microstructures and electrical properties of 8.4% nitrogen-doped GeTe and GeBi(6at.%)Te films thermally annealed in N 2 atmosphere were investigated. With the addition of Bi to N-doped GeTe films, the initial crystallization temperature was reduced and crystallization speed slowed. The N-doped GeBiTe films showed a rapid increase in crystallite size compared to the N-doped GeTe films....
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