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A high-quality ZnO epilayer was grown on the (0001) sapphire substrate by atomic layer deposition (ALD) and followed by high-temperature rapid thermal annealing (RTA). The layer-by-layer growth and low deposition temperature of ALD, as well as the RTA treatment, prevent the formation of columnar structures in the ZnO epilayer. A distorted ZnO layer at the ZnO/sapphire interface, which relaxes the...
Atomic layer deposition (ALD) is a very promising deposition technique for compound semiconductor films such as ZnO. However, there have been very few reports on ZnO-ALD. Effects of substrate temperature on the microstructure and photoluminescence (PL) properties of ZnO thin films were investigated using X-ray diffraction, PL and scanning electron microscopy analysis techniques.The ALD window is found...
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