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We report on the annealing effects of CrN buffer layers on the crystal quality of Zn-polar ZnO films grown by plasma assisted molecular beam epitaxy. The high-temperature (HT) annealing of CrN buffer layer improved the crystallinity of ZnO films. The full width at half maximums of (0002) and (10–11) ZnO ω-scan X-ray diffraction show 574 and 1296arcsec, respectively, which show the 3 and 2 times narrower...
Zinc oxide thin films, with thicknesses between ∼20 and 450nm, were prepared by spin-coating a sol–gel precursor solution (zinc acetate dihydrate and monoethanolamine in an isopropanol solvent) onto glass substrates, followed by heat treatment at temperatures through 773K. At 298 and 373K, the films exhibited the structure of a lamellar ZnO precursor, Layered Basic Zinc Acetate (LBZA). At higher temperatures,...
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