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Polycrystalline p-type Cu x O films were deposited after the growth of HfO 2 dielectric on Si substrate by pulsed laser deposition, and Cu x O metal-oxide-semiconductor (MOS) capacitors with HfO 2 /SiO 2 stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline...
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