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The formation mechanism of electroless deposited Co(W,P) films is investigated. Co(W,P) films, containing 88–90at% of Co and 10–12at% of W and P, are deposited directly onto p-type Si(100) substrate via Pd wet activation. Co(W,P) initially nucleates around Pd activation sites and this is followed by a strong lateral growth. Uniform Co(W,P) thin films can be obtained after 2min deposition. Fast immersion...
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