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Proton‐irradiation has been realized on Fe‐contaminated p‐type Czochralski silicon and investigated for interaction between Fe and irradiation‐induced defects using deep level transient spectroscopy. From isochronal thermal annealings, three distinctive Fe‐related defects are observed with energy level position of 0.17, 0.28 and 0.34 eV above the valence band edge. From the evolution of the defect...
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