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The studies of curled GaN nanowires grown on sapphire and silicon substrate using chemical vapor deposition method have been reported in this article. The mean diameters of the nanowires grown on sapphire and silicon were 108.1 nm and 98 nm respectively. A growth model was proposed to describe the growth of nanowires. X-ray diffraction pattern and Raman spectroscopy revealed that the nanowires were...
Distinct GaN islands of triangular base were formed during the annealing processes of GaN nucleation layers grown on Si-rich SiN x nanoislands patterned sapphire substrates due to enhanced diffusion and regrowth anisotropy. Subsequent high temperature growth of GaN epilayers on the nucleation layers resulted in island coarsening and shape variations from triangular to hexagonal due to the...
We studied the correlation between the low-temperature optical properties and the surface morphology of molecular beam epitaxy (MBE) grown GaN on sapphire(0001). The samples were grown under Ga-rich conditions, with the Ga-flux as a parameter, and with all other growth parameters constant. High-resolution scanning electron microscopy (SEM) provided a measure of the surface morphology, while the optical...
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