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The aluminum nitride (AlN) piezoelectric thin films doped 13% Sc atoms were deposited on (100) p-type silicon by reactive magnetron sputtering. Scandium (Sc) doping of AlN enhanced piezoelectric response drastically compared with non-doped AlN. The effects of substrate temperature of ScAlN on crystal structure and piezoelectric response were investigated. The results tested by X-ray techniques clearly...
β-Ga 2 O 3 films have been deposited on single crystalline MgAl 6 O 10 (100) substrate by the metal organic chemical vapor deposition (MOCVD) technique in the temperature range 550–700°C. Structural and optical properties of the film as well as the epitaxial mechanism have been investigated in detail. The results of structure analyses show that the film prepared at...
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