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We investigate structural and optical properties of GaN and InGaN on sapphire and neodymium gallate substrates, deposited by MBE using a novel RF and conventional ECR nitrogen activators. The GaN/NdGaO 3 layer demonstrates higher luminescence efficiency compared with GaN/Al 2 O 3 . Dislocation density in GaN/NdGaO 3 , estimated using X-ray diffraction measurements,...
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