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We have fabricated Si/Ge stack junction solar cells in order to overcome silicon single junction limit efficiency. Ge cell can absorb long wavelength photons that cannot be absorbed in Si. Bottom Ge solar cell can theoretically yield additional 5% efficiency to Si top cell. We have fabricated 21.3% top Si / 1.6% bottom Ge stack junction with 22.9% module efficiency. SiO2 and SiNx double insulating...
We report a novel method to form metal nano-gridlines on textured Czochralski (CZ) silicon. This involves the deposition of tensile stressed silicon nitride under conditions that cause cracks at the base of the pyramid features. The crack width is adjusted with buffered BHF and the opening is self-aligned with the nitride as a mask. Subsequently, the metal lines are plated within the cracks, forming...
Interdigitated Back Junction (IBJ) solar cells are suited to be realized on thin wafers, since they need a combination of high diffusion lengths and thin substrates. Here we present an industrial type passivation stack at the rear surface of an IBJ solar cell, consisting of a low quality SiO2 and a SiNx layer, which has proven its value in the i-PERC concept developed at IMEC. Quasi-Steady-State Photo...
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