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In this paper, a study of the leakage current through strained p+ n Si1-xGex/Si hetero-junctions is presented. The reduction in the band gap, induced by stress forces, and the doping level at the hetero-interface, due to the use of halo implantations, are varied by changing the Ge content and the recess depth. A comparison between simulation results and experimental data is presented to analyze the...
Silicon as a semiconductor material is well established and first choice for the vast majority of devices. However, due to continuous device optimisation and improvements in the production process, the material properties are more and more the limiting factor. Workarounds like the super junction stretch the limits but usually at substantial cost. So a lot of effort is spent into the more straight...
We have observed room-temperature 1.5 mum-infrared electroluminescence from a silicon suboxide-based p-i-n heterostructure: n-SnO2/Er-doped SiOx/p-GaN. The n-SnO2 and p-GaN layers are introduced for efficient current-injection via their widegap semiconductor properties.
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