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In this paper, we present the electrical properties evolution, following a dry thermal oxidation, of LPCVD polycrystalline silicon layers. The polysilicon thin films deposited on monosilicon substrates, at different temperatures (Td = 520 to 605degC), are highly in situ boron doped (2times1020 cm-3). The thermal oxidation treatment was carried out under dry oxygen atmosphere at the temperatures Tox...
The polycrystalline semiconductor film consists of various size crystalline grains that have properties of crystalline silicon. The grains are randomly spatially oriented thus decreasing the magnitude of piezoresistance. Depending on the dopant concentration within the grains the depleted regions originated owing to carrier trapping on the grain boundary can have various dimensions. As the carrier...
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