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Multi-layered Al:ZnO thin films, with wurtzite - type structure and thickness up to 120 nm, as determined by x-ray diffraction and HRTEM, were grown on Si-SiO2 and glass substrates by the sol-gel method. Fluorescence spectroscopy measurements show that 0.5 at.% Al doping determines a blue shift of the emission band observed at 387nm in the undoped material. The room temperature conductivity increases...
Data from resistivity, optical transmission and reflectance, and open-circuit voltage (V/sub oc/) measurements show hydrogen or ammonia plasma treatment greatly reduces the effective doping concentration, the parasitic optical absorption and improves the minority carrier properties of poly-Si films fabricated by aluminium-induced crystallisation (AIC) on glass substrates. Two 450 nm thick AIC poly-Si...
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