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An enhancement-mode Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) device has been developed in 0.13µm technology platform. The single-transistor (1-T) SONOS device in NOR Flash memory array utilizes n-channel cells. The development of 1-T SONOS is not an easy feat due to many disturbs experienced by the cells during operation. By the manipulation of program/erase mechanisms and operational conditions,...
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