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Metal oxide based resistive switching memories (also known as RRAM for Resistive Random Access Memory) often show large variability, due to the stochastic nature of the switching process. This paper discusses the variability of key RRAM parameters with the focus on the resistance variation. The dependence of resistance variation on operation conditions is analyzed, using Cu2O-based RRAM as an example...
Much progress is being made in the fabrication of molecular devices and nanoscale circuits. Such strides have led to studies and experimental tests using these devices in non-volatile memory arrays. However, the architecture of such arrays makes it difficult to accurately determine the value of each stored bit in the memory. When reading, each bit is effected by the rest of the memory through variable...
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