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This paper demonstrates a power amplifier (PA) design procedure for achieving high peak efficiency over a wide bandwidth. A harmonic load-pull is performed over the desired frequency range resulting in theoretically optimum load impedances. Analysis of wide bandwidths where the harmonic bands overlap with the fundamental band and lower harmonic bands are performed. Practical impedances are found through...
This paper presents a new method to design high efficiency and wideband power amplifier (PA). Based on the output parasitics network of MOSFET, this method shifts the optimum load impedances from the intrinsic plane to the package plane, which are obtained by the continuous PA theory and then rectified elaborately by multi-harmonic bilateral-pull technology, in order to make the second harmonic load...
A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 20 W output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier's output power and efficiency. To assure a...
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