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In this paper, multi-order, on-chip transmission line-radial stub ladder networks are designed to perform fundamental and harmonic impedance matching and power combining in a broadband silicon power amplifier. A 16–40GHz, 1W PA with integrated 50Ω output matching and power combining is designed in a 130nm SiGe BiCMOS process. The PA achieves a peak gain of 23.8dB and a maximum single ended output...
SiGe 4G PA development is a key element in enabling integrated 4G front end SiGe ICs. In this paper, we report on a wideband SiGe 4G PA IC which meets WIMAX (802.16e) and LTE specifications. For 802.16e, the SiGe PA produces 25 dBm linear power at Vcc=3.3V for 2.3-2.7 GHz operation with <;4% EVM and 18% efficiency while meeting spectral mask and exhibiting -43 dBm/MHz second harmonic levels. For...
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