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A high power added efficiency (PAE) GaN inverse Class F PA (power amplifier) at 2.14 GHz with UWB (Ultra Wideband) bandpass notched filter is designed, fabricated and tested. For this amplifier, second harmonic and fourth harmonic are rejected by the bias circuit, while third harmonic is controlled by a UWB bandpass notched filter and fifth harmonic is tuned by a traditional λ/4 transmission line...
In this contribution, the design of an uneven AB-C Doherty power amplifier (DPA) in GaN technology, implementing a new approach to control the higher device harmonics, is presented. The DPA was designed to operate at 2.14 GHz and with the aim to reduce as much as possible the chip size, without losing the Doherty operating principle. The measurement results in CW conditions at 2.14 GHz had shown average...
This paper presents a 50 W current mode class D (CMCD) power amplifier (PA) operating at 2.14 GHz. The PA is implemented using GaN pHEMT. The peak drain efficiency (iquest) is 62.7% and power added efficiency (PAE) is 60.3%. A resonator without an inductor was implemented to eliminate any loss that results from the low quality factors. The resonator uses narrow microstrip DC-feed lines located close...
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