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A 5-GHz fully integrated for China ETC applications, low-phase-noise and wide-band LC voltage controlled oscillator is presented. Low-phase-noise has been achieved by using control line filtering technology and avoiding the tail current source. The circuit is implemented in the 0.18um TSMC CMOS process. The oscillator is tuned from 5.27 to 6.41 GHz with switched capacitors. This VCO consumes 5.6mA...
This paper presents a wide tuning rang mm-wave VCO (voltage controlled oscillator) fabricated in IBM 90-nm CMOS technology. The VCO can be tuned from 31.4 GHz to 42.2 GHz and utilizes a differential tuning mechanism based on varactors and switched capacitors. A switched current source is used to improve the performance of the VCO when an MIM (metal-insulated-metal) capacitor is switched in the LC...
A 34-40 GHz VCO fabricated in 65 nm digital CMOS technology is demonstrated in this paper. The VCO uses a combination of switched capacitors and varactors for tuning and has a maximum Kvco of 240 MHz/V. It exhibits a phase noise of better than -98 dBc/Hz @ 1-MHz offset across the band while consuming 12 mA from a 1.2-V supply, an FOMT of -182.1 dBc/Hz. A cascode buffer following the VCO consumes 11...
An LC-tank oscillator for ultra-low-power narrow-band applications is designed using a switched capacitors tuning implementation in a 9-layer-metal 90 nm RF CMOS technology. The oscillator is targeted for 900 MHz and 2.4 GHz ISM bands operation with external inductors. The design resulted in a flexible and digitally controllable oscillator core that can be used with both external and planar integrated...
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