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A zero-level packaged, digitally switched, RF MEMS capacitor array has been developed within a mass production capable HV RF CMOS process. These RF MEMS capacitors are grouped in flip-chip cells that exhibit a high quality factor of 87 at 2 GHz, a tuning ratio of almost 10 to 1, a self resonant frequency greater than 5 GHz, and operate using a 3.3 V supply voltage. These arrays are ideally suited...
This paper presents a 1.25 Gbps optical links design for mobile handsets. The system consists of an optical connector and a SER/DES main chip. The former contains an 850 nm VCSEL (vertical cavity surface emission laser), a GaAs-PIN photodiode and a transimpedance amplifier (TIA). The later includes a serializer, a deserializer, a VCSEL driver, a limiting amplifier, a PLL and a CDR. The chip and TIA...
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