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A 2-6 GHz WiMAX low noise amplifier (LNA) is designed and implemented in 0.18-??m CMOS process. This low noise amplifier utilizes a current-reused technique, and a high-pass input matching network. The LNA presents a maximum power gain of 18.4 dB at 2 GHz. The minimum noise figure (NF) is 2.1dB. S11 is less than -16 dB. The total power consumption is 17.4 mW under a 1.8 V power supply. The chip size...
A 1-5 GHz ultra-wideband CMOS low-noise amplifier (LNA) is presented. A common-gate topology is adopted for the input stage to achieve wideband input matching, while a cascode stage is used as the second stage to provide power gain at high frequencies. By using two inductors in the LNA, a small chip area is obtained. The LNA has been fabricated in a standard 0.18 μm CMOS technology. The measured maximum...
In this paper, we present a new wideband low noise amplifier which operate in UHF band for spectral sensing in the receiver of cognitive radios. The circuit employs the noise-canceling technique, and can achieve the higher gain and lower power dissipation. The method of shunt-resistive feedback is adopted for achieving a broad bandwidth. The LNA is designed by the CMOS 0.18 um RF technology. Simulated...
This paper demonstrates a broadband LNA for 60-GHz WPAN and a 92-GHz low-power distributed amplifier (DA) in an advanced CMOS technology. A post-processed technology (above-IC), used for packaging and bonding pads redistribution, provides ultra-low-loss on-chip passives in a cost-effective solution. In the WPAN bandwidth (57-64 GHz), the LNA has a 13.4 dB peak gain, a NF between 5.6-6.7 dB and a gain...
A low-power ultra-compact CMOS low-noise amplifier (LNA) in a shunt-resonating current-reused topology is presented. The common-source transistors are connected with a shunt-resonating inter-stage match network such that the bias current is shared to have low power consumption and RF signal is doubly amplified to have high gain and low noise figure. The implemented 0.18 mum CMOS LNA achieves 15.2...
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