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The interaction of 150 keV protons with a high-doped n-GaAs crystal has been investigated by X-ray diffraction at grazing incidence (XRDGI), photoreflectance (PR), photoluminescence (PL) and scanning electron microscopy (SEM). The measurements confirmed that simultaneous with almost full loss of the semiconducting properties of the surface crystal region after applying the 10 15 proton/cm...
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