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The oxidation of the CoGa(100) surface at temperatures above 600 K has been studied by means of thermal energy helium atom scattering and Auger electron spectroscopy. The oxide grows in large domains with an estimated mean size of 40 nm or larger, and with a constant thickness. The order of the oxide film can be improved by increasing the oxidation temperature. Although the oxide is found to be unstable...
The preparation of an ordered Ga 2 O 3 oxide on the CoGa(100) surface by exposing the surface to oxygen at room temperature and subsequent annealing has been studied by thermal energy helium atom scattering and Auger electron spectroscopy. During room temperature oxidation a disordered Ga 2 O 3 layer forms. The oxidation process is studied with He scattering and the...
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