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A 7-ns, 1 M×1/256 K×4 BiCMOS ECL (emitter coupled logic) SRAM with program-free redundancy is described. To obtain the fast address access time and low power consumption, an improved ECL buffer and two-stage sensing scheme were adopted. The SRAM was fabricated with a 0.8-μm double-poly-Si double-metal BiCMOS technology. The RAM has an ECL 10 K interface and operates at a...
A 1-Mb ECL (emitter coupled logic) I/O SRAM which has been fabricated using 0.8-μm BiCMOS technology is described. The die is configurable to four different organizations (1 Mb×1, 1 Mb×1 with differential output, 512 K×2 with differential output, and 256 K×4) by way of bonding options. The device, with a die size of 240 mil×475 mil, has a typical...
A RAM which uses circuit techniques and architectural innovation to achieve the performance demanded by today's systems is described. An input buffer/level translator, a current sense amplifier, and a high-speed architecture are used in this RAM to achieve the 5-ns access time along with the 0.6-μm BiCMOS technology. The chip is organized as 128 K-words×8-b wide using a 4T2R memory...
A fast-access intermediate supply voltage level BiCMOS SRAM (ISVOL) architecture is proposed for advancing circuit technology to megabit-level SRAMs using low-submicron MOSFETs. To verify this concept's effectiveness, a 256-kb SRAM, with a typical access time of 5 ns, is evaluated and reported. The access time dependence of the supply voltage is shown. This architecture can suppress the access time...
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