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Submicrometer CMOS devices were integrated with self-aligned double-polysilicon bipolar devices, showing a cutoff frequency of 16 GHz and an ECL circuit speed of 65 ps/gate. It was found that an amorphous silicon film deposited at 575 degrees C and used as the base electrode improve the gate oxide breakdown voltage compared to a polysilicon film deposited at 600 degrees C. The PMOS FETs showed good...
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