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A 7-ns, 1 M×1/256 K×4 BiCMOS ECL (emitter coupled logic) SRAM with program-free redundancy is described. To obtain the fast address access time and low power consumption, an improved ECL buffer and two-stage sensing scheme were adopted. The SRAM was fabricated with a 0.8-μm double-poly-Si double-metal BiCMOS technology. The RAM has an ECL 10 K interface and operates at a...
The following topics are dealt with: dynamic RAM; analog-to-digital conversion; static RAM; analog circuits; circuit techniques; memory design; logic; nonvolatile and special memories; cache memories; and processors. Abstracts of individual papers can be found under the relevant classification codes in this or other issues
The authors propose HEMT (high electron mobility transistor) VLSI technology using nonalloyed ohmic contacts. For large integration levels, nonalloyed ohmic contacts have two advantages. One is their extremely short ohmic length, and the other is that direct connection between source/drain and gate can be made with the same metal. The propagation delay time of a ring oscillator with one-metal simultaneous...
The n-channel MOSFET transient substrate current during dynamic hot-carrier stressing has been found to be a strong function of the rise and fall time of the gate/drain voltages. At fast rise and fall times (<10 ns), the displacement current associated with the dynamic stressing becomes a significant portion of the transient substrate current. The magnitude and direction of displacement current...
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