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A direct high-k/Si gate stack has been proposed for gate oxide scaling. With LaCe-silicate, an EOT of 0.64 nm with an average dielectric constant (kav) of 17.4 has been obtained and an extremely low gate leakage current (Jg) of 0.65 A/cm2. The flatband voltage (Vfb) can be controlled by the compositional ratio of La in the LaCe-silicate layer. Furthermore, incorporation of Ge atom into the silicate...
Experimental results for crystalline Gd2O3-based MOS capacitors show that these layers are excellent candidates for application as very thin high-K materials replacing SiO2 in future MOS devices. First electrical characteristics of n- and p-type SOI-MOSFETs with epitaxial Gd2O3 demonstrate the general feasibility of this novel gate insulator, but thermal stability during typical CMOS annealing processes...
An aggressive EOT scaling with high-k gate dielectrics has been presented by selection of a rare earth silicate (La, Ce and Pr) as an interfacial layer with La2O3 stacking. Among silicates, La2O3/Ce-silicate nFET has performed a small EOT of 0.51 nm with a reduced gate leakage current of 102 A/cm2. SrO capping further reduces the gate leakage current also with a smaller EOT with improved subthreshold...
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