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Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.
In this work, impact of domain boundaries on dielectric properties of epitaxial Gd2O3 thin films grown on Si(001) substrates with 4?? miscut along [110] azimuth were studied. Epitaxial Gd2O3 layers with and without domain boundaries could be prepared on same Si(001) substrates with 4?? miscut when the surface is prepared under special condition prior to the layer growth. A miscut substrate surface...
Formation of ultra-shallow p+/n junction has been performed with the combination of low-temperature solid phase epitaxy and non-melt laser annealing. The former is aimed for improving crystallinity of junction region and the latter for activating implanted B ions. After pre-amorphization implantation of Ge, B ion implantation was performed at energy of 0.2 keV with a dose of 1.2 times 1015/cm2. With...
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