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Nanocrystalline piezoresistive polysilicon films were obtained at low temperatures by aluminum-induced crystallization (AIC). The films exhibited granular structure with good polycrystalline properties. A piezoresistive pressure sensor was fabricated on a polyimide substrate, in a Wheatstone bridge configuration comprising two passive resistors and two active piezoresistors made of polysilicon films...
The resistivity of a quasi-one-dimensional structure fabricated without masks by 20-keV Ga+ focused ion beam (FIB) on crystalline Si substrates was investigated for the first time, along with an analysis of properties of implanted p+ layers. The junction depth of the 7?? off-axis implanted layer after annealing, which was measured by stain method, is 410 nm. The distribution profile was investigated...
Large-scale amorphous SiO2 nanoblades with typical widths of 300-600 nm, thickness of a few tens of nm, and lengths up to 12 ??m have been synthesized on a silicon substrate covered with a 100-nm-thick crystalline SiO2 buffer layer in a controlled aqueous solution. Intense blue luminescence centered at 3.0 and 2.8 eV was observed in the as-synthesized SiO2 nanoblades. The 2.8-eV band can be attributed...
Single-walled carbon nanotubes (SWCNTs) are one of the most interesting alternatives to indium tin oxide for the fabrication of transparent conductive films. SWCNT percolating networks have been produced by a variety of different methods, mainly by spraying or filtration of solutions, but, unfortunately, suspending CNTs in liquid requires the use of ultrasound and surfactants. While sonication reduces...
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