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Ring-shaped silicon trenches with a depth of 50 were filled with different spin-on dielectric (SOD) polymers. Ultimately, the polymer should serve as deep trench isolation layers, also called liners, for 3-D wafer-level packaging through silicon vias (TSVs). TSVs allow the vertical stacking and interconnection of multiple devices. 3-D packaging is an emerging technology that can be an alternative...
The 3 D interconnect technology with Thru Silicon Via (TSV) have gained tremendous advancement in recent years. Final adoption of TSV technologies requires a robust and cost competitive TSV processes. Sidewall plated TSV with polymer filling can reduce half of total process steps from TSV copper (Cu) seed deposition to front-via1 expose. TSV plating time can be reduced ~ 60% for sidewall plated TSV...
Due to large mismatch in coefficients of thermal expansion between the copper via and the silicon of Through Silicon Via(TSV), significant thermal stresses will be induced at the interfaces of copper/dielectric layer (usually SiO2) and dielectric layer/silicon when TSV structure is subjected to subsequent temperature loadings, which would influence the reliability and the electrical performance of...
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