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This letter compares TiN/La/TiN (TLT) and TiLaN (TLN) metal gates on substrates, focusing on the flatband voltage modulation and interfacial layer (IL) scaling. The maximum modulation value of the stack was 423 mV compared to the of the TiN single-metal case, which is superior to that of TLN ( 247 mV). This...
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