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An investigation of threshold voltage instability in gate recessed normally-off GaN metal insulator semiconductor high electron mobility transistors (MIS-HEMTs) was performed by analyzing the interface states, border traps, and conduction band offset. To reduce the threshold voltage instability with improved dielectric-GaN interface, plasma enhanced atomic layer deposition (PEALD) technique was successfully...
This letter investigates silicon dioxide (SiO2) layers that are electrochemically grown in nitric acid (HNO3) at room temperature. It examines the dependence of surface recombination velocity (SRV), oxide charge, interface states, and oxide thickness on the concentration of HNO3. The results show that an SRV of less than 40 cm/s can be attained after SiO2 is annealed at 400°C in oxygen first and then...
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