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This paper presents principles and results of dynamic testing of an SRAM-based FPGA using time- resolved fault injection with a pulsed laser. The synchronization setup and experimental procedure are detailed. Fault injection results obtained with a DES crypto-core application implemented on a Xilinx Virtex II are discussed.
Simultaneous switching noise (SSN) is an important issue for the design and test and actual ICs. In particular, SSN that originates from the internal logic circuitry becomes a serious problem as the speed and density of the internal circuit increase. In this paper, an on-chip monitor is proposed to detect potential logic errors in digital circuits due to the presence of SSN. This monitor checks the...
We present a practical, systematical method for the evaluation of the soft error rate (SER) of microelectronic devices. Existing methodologies, practices and tools are integrated in a common approach while highlighting the need for specific data or tools. The showcased method is particularly adapted for evaluating the SER of very complex microelectronic devices by engineers confronted to increasingly...
The soft-error vulnerability of flip-flops has become an important factor in IC reliability in sub-100-nm CMOS technologies. In the present work the soft-error rate (SER) of a 65-nm flip-flop has been investigated with the use of alpha-accelerated testing. Simulations have been applied to study the flip-flop SER sensitivity in detail. Furthermore, an easy-to-use approach is presented to make an accurate...
In this paper, we present a new technique to improve the reliability of H-tree SRAM memories. This technique deals with the SRAM power-bus monitoring by using built-in current sensor (BICS) circuits that detect abnormal current dissipation in the memory power-bus. This abnormal current is the result of a single-event upset (SEU) in the memory and it is generated during the inversion of the state of...
With the event of nanoscale technologies, new physical phenomena and technological limitations are increasing the process variability and its impact on circuit yield and performances. Like combinatory cells, the sequential cells also suffer of variations, impacting their timing characteristics. Regarding the timing behaviors, setup and hold time violation probabilities are increasing. This article...
The minimum operating voltage (Vmin) of nano-scale LSIs is investigated, focusing on logic gates, SRAM cells, and DRAM sense amplifiers in LSIs. The Vmin that is governed by SRAM cells rapidly increases as devices are miniaturized due to the ever-larger variation of the threshold voltage (VT) of MOSFETs. The Vmin, however, is reduced to the sub-one-volt region by using repair techniques and new MOSFETs...
We present a generic method for analyzing the effect of process variability in nanoscale circuits. The proposed framework uses kernel and a generic tail probability estimator to eliminate the need for a-priori density choice for the nature of circuit variation. This allows capturing the true nature of the circuit variation from a few random samples of its observed responses. The data-driven, non-parametric,...
A novel methodology for accurate and efficient static timing analysis is presented in this paper. The methodology is based on finding a frequency domain model for the gates which allows uniform treatment of the gates and interconnects. It is shown that despite the highly nonlinear overall gate model, a frequency domain model of the gate with the model parameters, gate moments, as functions of the...
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