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Short circuit III is the occurrence of a short circuit across the load during the conducting mode of the freewheeling diode. This has the same importance for the application of high power IGBTs as the known short circuit II. Different to short circuit II, the IGBT of the same module is now turned-on starting from very low voltage across its terminals and showing a forward recovery voltage before saturating...
This paper presents principles and results of dynamic testing of an SRAM-based FPGA using time- resolved fault injection with a pulsed laser. The synchronization setup and experimental procedure are detailed. Fault injection results obtained with a DES crypto-core application implemented on a Xilinx Virtex II are discussed.
Simultaneous switching noise (SSN) is an important issue for the design and test and actual ICs. In particular, SSN that originates from the internal logic circuitry becomes a serious problem as the speed and density of the internal circuit increase. In this paper, an on-chip monitor is proposed to detect potential logic errors in digital circuits due to the presence of SSN. This monitor checks the...
With the event of nanoscale technologies, new physical phenomena and technological limitations are increasing the process variability and its impact on circuit yield and performances. Like combinatory cells, the sequential cells also suffer of variations, impacting their timing characteristics. Regarding the timing behaviors, setup and hold time violation probabilities are increasing. This article...
We present a generic method for analyzing the effect of process variability in nanoscale circuits. The proposed framework uses kernel and a generic tail probability estimator to eliminate the need for a-priori density choice for the nature of circuit variation. This allows capturing the true nature of the circuit variation from a few random samples of its observed responses. The data-driven, non-parametric,...
This paper introduces a novel current sense amplifier (CSA) in sub-32nm fully depleted (FD) double-gate (DG) silicon-on-insulator (SOI) technology with planar independent self-aligned gates. A new architecture is proposed which takes advantage of the back gate in order to improve circuit properties. Compared to the reference circuit, the new architecture proves to be faster (21% sensing delay decrease),...
3D contactless technology based on capacitive coupling represents a promising solution for high-speed and low power signaling in vertically integrated chips. AC coupled interconnects do not suffer from mechanical stress, and the parasitic load is much reduced when compared to standard DC solutions, such as wire bonding and micro bumps. Communication system based on wireless interconnection scheme...
In deep submicron era, to prevent larger amount of SRAM from more frequently encountered overheating problems and react accordingly for each possible hotspots, multiple ideal run-time temperature sensors must be closely located and response rapidly to secure system reliability while maintaining core frequency. This paper presented a method to extract run-time temperature information from multiple...
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