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This paper studies the overload turnoff failure in the insulated-gate bipolar transistor (IGBT) devices of power multichip modules for railway traction. After a detailed experimental analysis carried out through a dedicated test circuit, electrothermal simulations at device level are also presented. The simulation strategy has consisted in inducing a current and temperature mismatch in two IGBT cells...
State-of-the-art device technologies of GaN power switching transistors are reviewed. The presented technologies solve the technical issues on GaN transistors for practical use replacing currently used Si-based power devices. Thick epitaxial growth over 6-inch Si substrates enables low cost fabrication of GaN devices with high breakdown voltages. A new operating principle for the normally-off GaN...
We present a GaN monolithic inverter IC on Si substrate and successful motor-drive by it for the first time. Taking advantages of the bi-directional operation free from the forward voltage off-set, the inverter can be operated just by the integrated six GaN-based normally-off gate injection transistors (GITs) without any external fast recovery diodes (FRDs) to flow the fly-wheel current. The IC enables...
PV array is increasingly employed for water pumping system. In this project, a controller to vary the amplitude of the inverter output voltage interposed between the PV array and single phase induction motor is developed. The detailed modeling of the components of proposed scheme has been taken up. The developed controller varies the pulse-width of a SPWM generator, so that that the inverter output...
The authors investigated an EMC macro-model of the CMOS logic inverter gate, named LECCS-I/O that consists of linear equivalent circuit and current sources. This paper modifies the macro-model by adding another current source to express the short-circuit current in the inverter. The macro-model was determined from SPICE calculations of impedance and power current by using a device model of an inverter...
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