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We developed a gate driver IC that can power IGBTs of up to 500 amperes for HEVs and EVs. A newly developed Zener clamping circuit effectively suppressed the IGBT spike voltage in short circuit (SC) mode. The silicon-on-insulator (SOI) process was utilized to achieve high temperature operation and high surge protection.
In order to avoid a bridge shoot-through, a simultaneous on-state of both IGBTs in a bridge leg is strictly forbidden. Therefore, the complementary switch is commonly turned on with a dead-time interval to ensure a complete turn-off the other IGBT. Due to the longer tail-current interval of IGBT switching process, for the purpose of absolute safe operation, the interlocking time to is empirically...
A 600V three-phase single chip inverter IC has been developed using a new SOI technology instead of conventional 500V Dielectric Isolation (DI) technology. In this new technology, 600V high voltage devices were materialized with a newly introduced poly-Si field plate and a multi diffusion region in order to reduce the electric field. A new IGBT accomplishes high current density with an on-resistance...
This paper presents an innovative intelligent power module in a molded dual-in-line package. It combines new reverse conducting IGBTs and a silicon-on-insulator (SOI) gate drive IC. It features internal schematics using the combination of PCB and lead-frame without using expensive heat transfer materials, such as ceramics. We provide a description of the module, its dimensions, and its internal schematics...
State-of-the-art device technologies of GaN power switching transistors are reviewed. The presented technologies solve the technical issues on GaN transistors for practical use replacing currently used Si-based power devices. Thick epitaxial growth over 6-inch Si substrates enables low cost fabrication of GaN devices with high breakdown voltages. A new operating principle for the normally-off GaN...
Short circuit III is the occurrence of a short circuit across the load during the conducting mode of the freewheeling diode. This has the same importance for the application of high power IGBTs as the known short circuit II. Different to short circuit II, the IGBT of the same module is now turned-on starting from very low voltage across its terminals and showing a forward recovery voltage before saturating...
The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because it doesn't have a JFET region. But due to the electric field concentration in the corner of the gate edge, the breakdown voltage decreases.
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