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The Self Turn-ON of IGBTs leads to an increased turn-on speed. As far as IGBTs with different threshold voltages are paralleled, collector current imbalances, during turn-on, may occur. The intensity of imbalance depends on the used gate-drive topology, influenced by the Self Turn-ON.
A new self-controlled and self-protected integrated power switch dedicated to self-switching mode power converters is presented. To achieve this function, two original topologies based on a thyristor and an IGBT are proposed. Their operating modes are analyzed with 2D physical simulation and the obtained results are discussed in order to compare the two topologies. The two architectures validate the...
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