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This article presents a neural recording amplifier suitable for large-scale integration with multi-electrode arrays (MEAs) in very low-power microelectronic cortical implants. The proposed amplifier is the most energy-efficient structure reported to date, which achieves an effective noise efficiency factor (NEF) smaller than the theoretical limit that was claimed in literature for any existing amplifier...
In this paper, signal to noise ratio (S/N) of a Geon-Si Resonant Cavity Encapsulated Schottky Photodetector has been calculated. The noise equivalent bandwidth (NEB) and different noise currents have been formulated and computed. The calculation has been done considering the trapping of carriers at the Si/Ge heterointerfaces. The noise Results show that the effect of interface trapping of holes plays...
In this paper, the noise equivalent bandwidth (NEB) of a Ge-on-Si Resonant Cavity Encapsulated Schottky Photodetector has been calculated. The calculation has been done considering the trapping of carriers at the Si/Ge heterointerfaces. The noise Results show that the effect of interface trapping of holes plays a significant role on the noise equivalent bandwidth of the photodetector at low-bias.
Advances in micromachining technology can facilitate the integration of SAW (Surface Acoustic Wave) devices and CMOS circuitry on IC scale substrate for Monolithic fabrication. The optimal design and performance of these filters can be reached by using new Smart materials. The key component in the structure of the SAW device is the piezoelectric materials used which depends mainly on some important...
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