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We have theoretically studied type-I and type-II confinement in InAs quantum dots with GaAs_{1-y}Sb_y capping layer. The character of the confinement can be adjusted by the Sb content. We have found that upon the transition from type-I to type-II confinement the hole wave functions change the topology from a compact shape to a two-segment shape, resulting in the complex changes in the exciton fine...
InAs quantum dots were grown by molecular beam epitaxy in the Stranski-Krastanow growth mode and annealed under N_2 atmospheres at different temperatures. The evolution of quantum dots with the annealing temperature increasing were slightly different with the results reported in the literature. Atomic force microscopy investigations of quantum dots uncapped layer show a size initial increase followed...
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