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TiN diffusion barrier layers were deposited on SiO2/Si substrate by ALD method that employed TiCl4 and NH3 as the source and reactant gases, respectively, at a temperature range between 350°C and 500°C. Properties of films, including deposition rate, resistivity, surface roughness and chemical composition, were investigated, and performance of TiN diffusion barrier layer was also verified. Deposition...
Capacitive humidity sensors were fabricated using countersunk interdigitated electrodes coated with amorphous nanostructured TiO2, SiO2, and Al2O3 thin films grown by glancing angle deposition. The capacitive response and response times for each sensor were measured. The sensor utilizing TiO2 exhibited the largest change in capacitance, increasing exponentially from ~ 1 nF to ~ 1muF for an increase...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
Bulk nanostructured (Bi,Sb)2Te3 compounds and GeTe based amorphous/nanocrystal composites have been successfully fabricated by the combined hydrothermal/hot-pressing and quenching/annealing methods, respectively. The (Bi,Sb)2Te3 nanopowders synthesized by hydrothermal method exhibit a hollow-like structure. After hot-pressing, the nanoscale grains varying from tens to hundreds of nanometers were found...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
We report on the technology of formation of sandwich structures based on fullerite films and on experimental results in research of optical and conductivity properties of these sandwich samples. Single crystals of sapphire (100) or silicon were used as substrates. The sandwich specimens were based on the structure M/C/sub 60//M (M = Cr, Pd, Ag, Al, Cu). The thickness of the fullerite films was /spl...
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