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Silicon nitride deposited by direct plasma chemical vapor deposition (D-PECVD) and remote plasma chemical vapor deposition (R-PECVD) is tested in terms of minority carrier lifetime. Data shows that the minority carrier lifetime is improved with D-PECVD SiNx compared to RPCVD SiNx. Emitter wrap through (EWT) solar cell fabrication showed similar improvements in short-circuit current density Jsc and...
In this paper, we present a model for the 2D numerical simulation of polycrystalline silicon solar cells. This model assumes a columnar structure of grain boundaries and a preferential diffusion of dopants formed along grain boundaries during the emitter step process. The simulation results of IQE and I-V parameters are compared to experimental data obtained on n/sup +/pp/sup +/ polycrystalline Si...
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