The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this study, we report synthesis of large area (gt;2cm2 ), crack-free GaAs and GaInP double heterostructures grown in a multi-junction solar cell-like structure by MOCVD. Initial solar cell data are also reported for GaInP top cells. These samples were grown on Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. The double heterostructures exhibit...
AlGaAs/GaAs double heterostructures for solar cells were grown on heteroepitaxial GaAs/Si layers by metal-organic chemical vapor deposition. These test devices were subsequently characterized by photoluminescence and transmission electron microscopy. The minority carrier lifetimes were found to be limited by recombination at mismatch dislocations. An inverse correlation between dislocation density...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.