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The development of ultrafine-pitch microbumps and the thermal compression bonding (TCB) process for advanced 3-D stacking technology are discussed in this paper. Microbumps, consisting of Cu pillars and thin Sn caps with a pitch of 25 , are fabricated on an Si chip by the electroplating method. Total thickness of the Cu pillar and the Sn cap is 10 . Electroless nickel and immersion...
Developments of ultra fine pitch and high density solder microbumps for advanced 3D stacking technologies are discussed in this paper. CuSn solder microbumps with 25 ??m in pitch are fabricated at wafer level by electroplating method and the total thicknesses of the platted Cu and Sn are 10 ??m. After plating, the micro bumps on the Si chip are reflowed at 265??C and the variation of bump height measured...
This paper presents an innovative structure based on 3 dimensional integration technology, where ultra thin inter layer dielectric enables a dynamic threshold voltage (VTH) control. A sequential process flow is proposed to fabricate 3D devices with dynamically tunable VTH. This ability can be exploited to design SRAMs cells with increased stability and surface density compared to planar technology...
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