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Static random access memories (SRAMs) comprise an increasingly large portion of modern very large scale integrated (VLSI) circuits. The increasing importance of embedded SRAM is due to its low circuit activity factor, leading to low active power density, and productivity of design. The power consumption has become an important issue and has lead to the development of numerous schemes aimed at limiting...
This paper studies the impact of intra-die random variability on low-power digital circuit designs, specifically, circuit timing failures due to intra-die variability. We identify a new low-Vdd statistical failure mode that is strongly supply-voltage dependent and also introduce a simple yet novel method for quantifying the effects of process variability on digital timing - a delay overlapping stage...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
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