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Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.
Conduction and valence band edges in diluted magnetic semiconductors undergo enormous Zeeman shifts when a magnetic field is applied, reaching values in excess of 100 meV at low temperatures. These Zeeman shifts can thus have profound consequences on the properties of DMS/non-DMS heterostructures, since they provide the opportunity of tuning their band alignment by varying an applied field. This...
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