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This paper proposes a new gate driving circuit for the solid-state pulsed power modulator (SSPPM) based on semiconductor devices. The proposed circuit can be easily implemented by applying a short gate signal to the bypass insulated gate bipolar transistor (IGBT), i.e., switches connected in parallel with the load instead of a pull-down resistor. The IGBT_BPs are turned <sc>on</sc> at...
This paper describes a 10kV cascade pulsed power supply for discharge applications with pulse width from 5μs to 30μs. Each cascade unit contains a main switch for generating a voltage switch and a chopping switch to reduce the fall time. A number of IGBTs are used for switching, and the driver devices adopt the design of pulse transformer. The trigger signal is generated by the H-bridge inverter circuit...
Continuing investigations indicate that a solid-state Marx modulator utilizing a novel boost circuit topology can generate a 4 ms long megawatt pulse at 10 Hz with a voltage droop of less than 1%. The boost regulator operates by charging the discharge capacitor with energy stored in a boost inductor. Both the discharge and boost capacitors are charged to the same pre-pulse voltage, so a single power...
An all solid-state Marx modulator utilizing Insulated Gate Bipolar Translators (IGBTs) is capable of outputting pulses with variable pulse width, repetitive pulse frequency and varying voltage amplitude. But the relatively slow turn-on speed of IGBT with high current loads result in slow rise time of output pulses. If a magnetic switch (MS) is combined with an all solid-state Marx, it will be quite...
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