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In this paper, a GaN HEMT class-E power amplifier (PA) has been designed for efficiently operating under variable load resistance at the 750 MHz frequency band. The desired zero voltage switching (ZVS) of the device can be approximated for a wide range of resistive loads, by means of a simple inductive impedance inverter, derived from [1]. The load-pull contours, obtained from simulations, allowed...
The inspection of the current and voltage waveforms at the current source reference planes of transistor models provides power amplifier (PA) designers with useful insights for identifying the class of operation of PAs. However when a specific class of operation at the current source reference plane is targeted, time-consuming multi-harmonic load- and source-pull simulations are required. Alternatively...
This paper discusses an approach taken to extract a virtual X-parameter (vX-parameter) model for a 500W L-Band internally matched device (IMD). X-parameters are essentially an open form of nonlinear data format that can be directly extracted from an NVNA and can be used in a circuit simulator as non-linear models. However, for very high power devices, the NVNA and its required peripheral components...
In conventional techniques for efficiency enhancement of outphasing systems, identical power amplifiers are employed for each branch while the output combining network is optimised using reactive compensating elements. In this work a methodology is presented for asymmetrical branch amplifier design based on the conjugate load modulation trajectories seen by each PA branch. Closed form equations and...
This paper discusses design of in-package reactances that can optimize efficiency of power amplifier transistors by specific and well-defined harmonic terminations and pre-matching within the device package. The methodology uses a passive fundamental-only load-pull tuner to characterize the transistor. As an example, the method is applied to a 10-W Infineon LDMOS device at a fundamental frequency...
This paper proposes a reconfigurable and concurrent dual-band power amplifier for upcoming wireless applications such as LTE carrier aggregation. The designed power amplifier operates concurrently at 1600 MHz and 2100 MHz when the switches are OFF; whereas, when the switches are ON, the power amplifier operating frequencies shifts to 1800 MHz and 2300 MHz. Thus, the proposed power amplifier topology...
This paper presents the design, implementation and experimental results of a broadband high efficiency GaN-HEMT power amplifier. The source-pull and load-pull simulations were employed to determine the optimum input and output impedance of a GaN transistor over 0.9–1.5 GHz in terms of maximum power added efficiency (PAE). A low-pass network based on a closed-form solution was applied for impedance...
This paper describes the design of a linear high efficiency Doherty power amplifier using TriQuint's 2nd generation Gallium Nitride (GaN) on Silicon Carbide (SiC) T1G6001032-SM. The device was designed for an operating frequency of 3.6 GHz with a 40 dBm saturated output power, and achieves a power added efficiency (PAE) of 60.5% and 52.5% with 6 dB power backed-off (PBO). Advanced Design Systems (ADS)...
A concurrent second harmonic controlled 1.7/2.14GHz dual-band GaN power amplifier (PA) for base station is designed, fabricated and tested in this paper. The influence of 2nd harmonic on PAE (Power Added Efficiency) for dual-band PA is discussed. A novel bias line structure is proposed to control the 2nd harmonic in the gate and drain side for dual-band operation. To the best knowledge of authors,...
In this article, we proposed one simple method which achieves variable load impedance. By this method, without utilizing load pull tuner, the errors caused by various reasons, such as parasitic effect at the lumped components and active devices, can be corrected. We designed and fabricated one Class-AB amplifier to demonstrate our simple method by adjusting a shunt variable capacitor and inductor...
X-parameter technology provides simulation-based design of non-linear circuits with inherent accuracy that is attributed to measurement-based model extraction. Recent advancements have combined Non-linear Vector Network Analyzer measurements with impedance tuners to compliment the equivalent accuracy of load-pull measurements with the analytic convenience of equation-based large-signal models. This...
This paper presents the operation principle of Class-J power amplifiers (PAs) with linear and nonlinear output capacitors (Couts). The efficiency of a Class-J amplifier is enhanced by the nonlinear capacitance because of the harmonic generation from the nonlinear Cout, especially the second-harmonic voltage component. This harmonic voltage allows the reduction of the phase difference between the fundamental...
A harmonically tuned power amplifier (PA) design approach is presented to provide high efficiency performance at Ka-band using a GaAs mHEMT device technology. A single-stage monolithic-microwave integrated-circuit (MMIC) class-AB PA is designed and measured. The PA efficiency is optimized for a circuit topology which allows harmonic load impedance terminations up to the third harmonic. An output power...
X-parameters are the mathematically correct supersets of S-parameters valid for nonlinear (and linear) components under large-signal (and small-signal) conditions. This work presents an automated application combining a nonlinear vector network analyzer (NVNA) instrument with automated load-pull measurements that extends the measurement and extraction of X-parameters over the entire Smith Chart. The...
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