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Multiphase motors are being used in high power electric transportation applications owing to their advantage such as high reliability, efficiency and fault-tolerant capability. A high power density drive system is needed to reduce the losses and increase heat-sinking capability. In this paper, the power drive module is packed using Silicon Carbide (SiC) MOSFET devices as they are capable of operating...
1200 V SiC MOSFET is a viable alternative for state of the art Si IGBTs due to its superior switching performances. However, high di/dt and dv/dt during the switching transients worsen the switching performance of the SiC MOSFET due to the presence of parasitic inductances in the inverter layout. They cause undesired overshoot and oscillations in the device voltage and current. They also increase...
SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. After that, Esw of a 650V GaN-HEMT is measured in hard switching condition and is compared with that...
Using the Fourier series solution to the ambipolar diffusion equation, the robustness of the body diodes of SiC MOSFETs during reverse recovery has been studied. Parasitic bipolar latch-up during the reverse recovery of the body diode is a possible if there is sufficient base current and voltage drop across the body resistance to forward bias the parasitic BJT. SiC MOSFETs have very low carrier lifetime...
The emergence of silicon carbide MOSFETs and Schottky Barrier Diodes (SBD) at higher voltage and current ratings is opening up new possibilities in the design of energy dense power converters. One of the main advantages of these wide bandgap unipolar devices is the use of fast switching to enable the size reduction of passive components. However, packaging constraints like parasitic inductances limit...
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